24.58% total area efficiency of screen-printed, large area industrial silicon solar cells with the tunnel oxide passivated contacts (i-TOPCon) design

We demonstrate an “industrial tunnel oxide passivated contacts” (i-TOPCon) silicon solar cell on large area n-type silicon wafers (156.75 × 156.75 cm2). This cell has a boron diffused front emitter, a tunnel-SiOx/n+-poly-Si/SiNx:H structure at the rear side, and screen-printed electrodes on both sides. The passivation of the tunnel-SiOx/n+-poly-Si/SiNx:H structure on silicon wafers is investigated. The saturation currents Jo of this structure on polished and textured silicon surfaces are 1.3 and 3.7 fA/cm2, respectively. After printing the Ag contacts, the Jo of this structure increases to 50.7 fA/cm2 on textured silicon surfaces, which is still manageably low for metal contacts. This structure was applied to i-TOPCon solar cells, resulting in a median efficiency of 23.91%, measured in-house, and a champion efficiency of 24.58%, independently confirmed by the ISFH CalTeC in Germany. The champion efficiency was measured with total area illumination, including screen-printed fingers and busbars.

Trina Solar, AMROCK

Daming Chen and Yifeng Chen and Zigang Wang and Jian Gong and Chengfa Liu and Yang Zou and Yu He and Yao Wang and Ling Yuan and Wenjie Lin and Rui Xia and Li Yin and Xueling Zhang and Guanchao Xu and Yang Yang and Hui Shen and Zhiqiang Feng and Pietro P. Altermatt and Pierre J. Verlinden

Solar Energy Materials and Solar Cells

Bifacial,Passivating contacts,i-TOPCon,n-type

2020

3

10.1016/j.solmat.2019.110258

09270248

110258

Elsevier B.V.

206